HMG160N65FT3 Datasheet - H&M Semiconductor

HMG160N65FT3 - 650V 160A IGBT

HMG160N65FT3 Features

* Low Switching Power Loss

* Low Switching Surge and Noise

* Advanced Field Stop Technology

* Low EMI

* Maximum Junction Temperature 175°C

* Qualified According to JEDEC For Target Applications

* Pb-free Lead Plating, Halogen-free Mold Compound, RoHS Compliant Applicati

Datasheet Details

HMG160N65FT3

H&M Semiconductor

595.53 KB

650v 160a igbt.

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