• Part: HMG50N65FT
  • Description: 650V 50A IGBT
  • Manufacturer: H&M Semiconductor
  • Size: 757.17 KB
Download HMG50N65FT Datasheet PDF
H&M Semiconductor
HMG50N65FT
Features : - Low Switching Power Loss - Low Switching Surge and Noise - Advanced Field Stop Technology - Low EMI - Maximum Junction Temperature 175°C - Qualified According to JEDEC For Target Applications - Pb-free Lead Plating, Halogen-free Mold pound, Ro HS pliant Applications: - Industrial UPS - Welding Machine - Solar Converters - Energy Storage - EV Charger Key Performance and Package Parameters Type Vce Ic VCEsat,Tvj=25℃ Tvjmax Marking 650V 50A 1.55V 175℃ Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj= 25°C (unless otherwise specified) Package TO-247-3L 1/7 HMG1)7 Electrical Characteristics at Tvj= 25°C (unless otherwise specified) Switching Characteristics at Tvj= 25°C Switching Characteristics at Tvj= 175°C 2/7 Thermal Resistance HMG1)7 3/7 HMG1)7 4/7 HMG1)7...