HMG75N65FT Datasheet - H&M Semiconductor

HMG75N65FT 650V 75A Trench Field Stop IGBT

HMG75N65FT Features

* High breakdown voltage up to 650V for improved reliability

* Trench-Stop Technology offering :

* High speed switching

* High ruggedness, temperature stable

* Short circuit withstand time

* 5s

* Low VCEsat

* Easy parallel switching capability due to positive tem

Datasheet Details

HMG75N65FT

H&M Semiconductor

657.23 KB

650v 75a trench field stop igbt.

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