HMG75N65FT Datasheet | H&M Semiconductor

FEATURES - High breakdown voltage up to 650V for improved reliability - Trench-Stop Technology offering : - High speed switching - High ruggedness, temperature stable - Short circuit withstand time - 5s - Low VCEsat - Easy parallel switching capability due to positive temperature coefficient in VCEsat - Converter with high switching frequency APPLICATION - Uninterruptible Power Supplies - Inverter - Welding Converters - PFC applications Product HMG75N65FT Package TO247 Packaging Tube Maximum Ratings （Tj= 25℃ unless otherwise specified） VCE(SAT= ) IC 75A Parameter Collector-Emitter Breakdown Voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C Continuous Gate-emitter voltage Transient Gate-emitter voltage Turn off safe operating area VCE ≤650V, Tj ≤ 150°C, tp = 1μs Pulse collector current, VGE =15V, tp limited by Tjmax Short Circuit Withstand Time, VGE= 15V, VCE≤...