HMG75N65FT 650V 75A Trench Field Stop IGBT

H&M Semiconductor

Description

HMG75N65FT 650V /75A Trench Field Stop IGBT .

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Datasheet Specifications

Part number: HMG75N65FT
Manufacturer: H&M Semiconductor
File Size: 657.23 KB
Datasheet: HMG75N65FT-HMSemiconductor.pdf
Description: 650V 75A Trench Field Stop IGBT

Features

* High breakdown voltage up to 650V for improved reliability
* Trench-Stop Technology offering :
* High speed switching
* High ruggedness, temperature stable
* Short circuit withstand time
* 5s
* Low VCEsat
* Easy parallel switching capability due to positive tem

Applications

* Product HMG75N65FT Package TO247 Packaging Tube Maximum Ratings （Tj= 25℃ unless otherwise specified） VCE 650 V IC 75 A VCE(SAT= ) IC 75A 1.7 V Parameter Collector-Emitter Breakdown Voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Diode Forward current, limited by Tjma

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