Part number:
HMS100N06KA
Manufacturer:
H&M Semiconductor
File Size:
771.88 KB
Description:
N-channel super trench power mosfet.
The HMS100N06KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switchin
HMS100N06KA Features
* VDS =60V,ID =100A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:4.8mΩ) RDS(ON) < 7.5mΩ @ VGS=4.5V (Typ:6.1mΩ)
* Excellent gate charge x RDS(on) product
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Application
* DC/DC Converte
HMS100N06KA-HMSemiconductor.pdf
Datasheet Details
HMS100N06KA
H&M Semiconductor
771.88 KB
N-channel super trench power mosfet.
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