HMS100N06KA - N-Channel Super Trench Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMS100N06KA
Manufacturer	H&M Semiconductor
File Size	771.88 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS100N06KA-HMSemiconductor.pdf

The HMS100N06KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =60V,ID =100A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:4.8mΩ) RDS(ON) < 7.5mΩ @ VGS=4.5V (Typ:6.1mΩ).
Excellent gate charge x RDS(on) product.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

📁 HMS100N06KA Similar Datasheet

Other Datasheets by H&M Semiconductor

Published: Jun 30, 2025 |