• Part: HMS20N15KA
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 419.83 KB
Download HMS20N15KA Datasheet PDF
H&M Semiconductor
HMS20N15KA
Description The HMS20N15KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =150V,ID =20A RDS(ON)=56mΩ (typical) @ VGS=10V RDS(ON)=68mΩ (typical) @ VGS=4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - LED backlighting - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! +061.$ Schematic diagram HMS20N15KA Marking and pin assignment TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package HMS20N15KA HMS20N15KA TO-252-2L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings...