HMS20N15KA Datasheet - H&M Semiconductor

HMS20N15KA - N-Channel Super Trench Power MOSFET

The HMS20N15KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

HMS20N15KA Features

* VDS =150V,ID =20A RDS(ON)=56mΩ (typical) @ VGS=10V RDS(ON)=68mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* LED backlighting

Datasheet Details

HMS20N15KA

H&M Semiconductor

419.83 KB

N-channel super trench power mosfet.

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