HMS20N25D - N-Channel Super Trench II Power MOSFET

H&M Semiconductor

HMS20N25D Datasheet Preview — Preview of HMS20N25D PDF

Datasheet Details

Part number	HMS20N25D
Manufacturer	H&M Semiconductor
File Size	1.12 MB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS20N25D-HMSemiconductor.pdf

HMS20N25D Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =250V,ID =80A RDS(ON)=89mΩ , typical (TO-220)@ VGS=10V RDS(ON)=89mΩ , typical (TO-252)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! PDFN5X6-8L Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS20N25D HMS20N25D PDFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratin.

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Published: Jun 22, 2025 |