• Part: HMS20N65F
  • Description: 650V 20A SJMOS N-MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 1.50 MB
Download HMS20N65F Datasheet PDF
H&M Semiconductor
HMS20N65F
Features - Much lower Ron- A performance for On-state efficiency - Better efficiency due to very low FOM - Qualified for industrial grade applications according to JEDEC Applications - LED/LCD/PDP TV and monitor Lighting - Solar/Renewable/UPS-Micro Inverter System - Charger - Power Supply Top view Bottom view Product Summary VDS,min RDS(on),typ ID 650V 145mΩ 20A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # HMS20N65F Marking - Package TO220F Packing Tube Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current 1) TC = 25°C TC = 100°C Pulsed drain current 2)(TC = 25°C, tp limited by Tj,max) Avalanche energy, single pulse (L=30m H) MOSFET dv/dt ruggedness Gate-Source voltage Power dissipation (TC = 25°C) Continuous diode forward current(TC = 25°C) Diode pulse current 2) (TC = 25°C) Recovery diode dv/dt 3) Operating junction and storage temperature 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50;...