HMS320N04 - N-Channel Super Trench II Power MOSFET
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency
HMS320N04 Features
* VDS =40V,ID =320A RDS(ON)=0.5mΩ , typical @ VGS=10V ID=1A
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking
