HMS320N04G Datasheet - H&M Semiconductor

HMS320N04G N-Channel Super Trench Power MOSFET

The HMS320N04G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

HMS320N04G Features

* VDS =40V,ID =320A RDS(ON)=0.5mΩ , typical @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN5X6-8L D DDD D DDD S SSG Top View G SSS Bottom Vi

HMS320N04G-HMSemiconductor.pdf