Part number:
HMS320N04G
Manufacturer:
H&M Semiconductor
File Size:
861.05 KB
Description:
N-channel super trench power mosfet.
The HMS320N04G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching
HMS320N04G Features
* VDS =40V,ID =320A RDS(ON)=0.5mΩ , typical @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN5X6-8L D DDD D DDD S SSG Top View G SSS Bottom Vi
HMS320N04G-HMSemiconductor.pdf
Datasheet Details
HMS320N04G
H&M Semiconductor
861.05 KB
N-channel super trench power mosfet.
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