• Part: HMS320N04G
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 861.05 KB
Download HMS320N04G Datasheet PDF
H&M Semiconductor
HMS320N04G
Description The HMS320N04G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification General Features - VDS =40V,ID =320A RDS(ON)=0.5mΩ , typical @ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN5X6-8L D DDD D DDD S SSG Top View G SSS Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS320N04G HMS320N04G DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Sourc...