HMS35N06D Datasheet - H&M Semiconductor

HMS35N06D - N-Channel Super Trench Power MOSFET

The HMS35N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

HMS35N06D Features

* VDS =60V,ID =35A RDS(ON)=9.1mΩ (typical) @ VGS=10V RDS(ON)=12mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram Marking and pin as

Datasheet Details

HMS35N06D

H&M Semiconductor

474.27 KB

N-channel super trench power mosfet.

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