HMS35N06D N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HMS35N06D N-Channel Super Trench Power MOSFET .
The HMS35N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS35N06D
Manufacturer: H&M Semiconductor
File Size: 474.27 KB
Datasheet: HMS35N06D-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =60V,ID =35A RDS(ON)=9.1mΩ (typical) @ VGS=10V RDS(ON)=12mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Schematic diagram Marking and pin as

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HMS35N06D N-Channel Super Trench Power MOSFET H&M Semiconductor

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