Part number:
HMS35N06D
Manufacturer:
H&M Semiconductor
File Size:
474.27 KB
Description:
N-channel super trench power mosfet.
HMS35N06D Features
* VDS =60V,ID =35A RDS(ON)=9.1mΩ (typical) @ VGS=10V RDS(ON)=12mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Schematic diagram Marking and pin as
Datasheet Details
HMS35N06D
H&M Semiconductor
474.27 KB
N-channel super trench power mosfet.
📁 Related Datasheet
HMS35N20A N-Channel Super Trench Power MOSFET (H&M Semiconductor)
HMS30C7202 Highly-integrated MPU (ABOV)
HMS30C7202 32-bit ARM7TDMI RISC static CMOS CPU core (Hynix Semiconductor)
HMS30C7202 32-Bit Microprocessor (Hynix Semiconductor)
HMS30C7202 32-Bit MPU (MagnaChip Semiconductor)
HMS30C7202N 32-Bit MPU (MagnaChip Semiconductor)
HMS30C7210 ARM Based 32-Bit Microprocessor (ABOV)
HMS310N85LL N-Channel Super Trench Power MOSFET (H&M Semiconductor)
HMS35N06D Distributor