• Part: HMS35N10K
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 736.73 KB
Download HMS35N10K Datasheet PDF
H&M Semiconductor
HMS35N10K
Description The HMS35N10K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =100V,ID =35A RDS(ON) =23mΩ(max @ VGS=10V RDS(ON) =33mΩ(max) @ VGS=4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification Schematic diagram HMS35N10K Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise...