HMS35N20A - N-Channel Super Trench Power MOSFET
The HMS35N20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching
HMS35N20A Features
* VDS =200V,ID =35A RDS(ON)=43mΩ (typical) @ VGS=10V RDS(ON)=50mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Application
* LED backlighting
