• Part: HMS50N10DA
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 483.22 KB
Download HMS50N10DA Datasheet PDF
H&M Semiconductor
HMS50N10DA
Description The HMS50N10DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =100V,ID =50A RDS(ON) <10mΩ @ VGS=10V RDS(ON) <13mΩ @ VGS=4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested (Primary Version) Schematic diagram Marking and pin assignment Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package HMS50N10DA HMS50N10DA DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless...