Datasheet Details
Part number:
HMS75N12DA
Manufacturer:
H&M Semiconductor
File Size:
538.69 KB
Description:
N-Channel Super Trench Power MOSFET
Features
* VDS =120V,ID =A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.9mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bo
HMS75N12DA-HMSemiconductor.pdf
HMS75N12DA, N-Channel Super Trench Power MOSFET
The HMS75N12DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching
HMS75N12DA Distributor
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