HMS75N12DA Datasheet - H&M Semiconductor

HMS75N12DA N-Channel Super Trench Power MOSFET

The HMS75N12DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

HMS75N12DA Features

* VDS =120V,ID =A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.9mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bo

HMS75N12DA-HMSemiconductor.pdf