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HMS7N80I - N-Channel Super Junction Power MOSFET

HMS7N80I Description

HMS7N80I/HMS7N80K N-Channel Super Junction Power MOSFET Ⅲ General .
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

HMS7N80I Features

* New technology for high voltage device
* Low on-resistance and low conduction losses
* Small package
* Ultra Low Gate Charge cause lower driving requirements
* 100% Avalanche Tested

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Datasheet Details

Part number
HMS7N80I
Manufacturer
H&M Semiconductor
File Size
564.22 KB
Datasheet
HMS7N80I-HMSemiconductor.pdf
Description
N-Channel Super Junction Power MOSFET

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