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HMS90N10KA - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The HMS90N10KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =90A RDS(ON) =6.4mΩ(Typ) @ VGS=10V RDS(ON) =9.3mΩ(Typ) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet preview – HMS90N10KA

Datasheet Details

Part number HMS90N10KA
Manufacturer H&M Semiconductor
File Size 866.66 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet HMS90N10KA Datasheet
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Full PDF Text Transcription

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HMS90N10KA N-Channel Super Trench Power MOSFET Description The HMS90N10KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =90A RDS(ON) =6.4mΩ(Typ) @ VGS=10V RDS(ON) =9.3mΩ(Typ) @ VGS=4.
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