Download HM20N120T Datasheet PDF
H&M Semiconductor
HM20N120T
Features - 1200V,20A,VCE(sat)(typ.)=2.1V@VGE=15V,20A - High speed switching - Higher system efficiency - Soft current turn-off waveforms - Square RBSOA using NPT technology General Description H&M NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter VCES VGES Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current ( TC=25 ℃) Continuous Collector Current ( TC=100℃) Pulsed Collector Current (Note 1) Diode Continuous Forward Current ( TC=100 ℃) Diode Maximum Forward Current (Note 1) tsc Short Circuit Withstand Time Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range TSTG Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case for IGBT Thermal...