HM20N50F Datasheet - H&M semi

HM20N50F 500V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

HM20N50F Features

* 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V

* Low gate charge ( typical 70nC)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GD S TO-220F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-

HM20N50F-HMsemi.pdf