HM80N03K - N-Channel Power MOSFET

Datasheet Summary

Description

The +01.

uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =80A RDS(ON).

H&M semi

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Datasheet Details

Part number	HM80N03K
Manufacturer	H&M semi
File Size	511.34 KB
Description	N-Channel Power MOSFET
Datasheet	HM80N03K Datasheet
Additional preview pages of the HM80N03K datasheet.

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+01. N-Channel Enhancement Mode Power MOSFET Description The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram +01.

Published: Apr 18, 2024 |