S9055
HAMAMATSU
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Si pin photodiodes.
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S9004P2CT - 30A SCHOTTKY BARRIER RECTIFIER
(Diodes Incorporated)
S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.
S9005P2CT - 20A SCHOTTKY BARRIER RECTIFIER
(Diodes Incorporated)
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S9011 - NPN Transistor
(WEJ)
RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector curren.
S9011 - NPN Silicon Epitaxial Planar Transistor
(BL)
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA) z Power dissipation.(PC=200mW)
Production speci.
S9011 - NPN Transistor
(GME)
NPN Silicon Epitaxial Planar Transistor
FEATURES
Collector Current.(IC= 30mA) Power dissipation.(PC=200mW)
APPLICATIONS
Pb
Lead-free
AM conve.
S9012 - PNP Epitaxial Silicon Transistor
(Fairchild Semiconductor)
SS9012
SS9012
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
• High total power dissipation. (PT=625mW) • High Collector Curr.
S9012 - PNP General Purpose Transistors
(Weitron Technology)
S9012
PNP General Purpose Transistors
P b Lead(Pb)-Free
..
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS.