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HU50N06 60V N-Channel MOSFET

HU50N06 Description

HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A .

HU50N06 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.022 Ω (Typ. ) @V GS=10V  100% Avalanche Te

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Datasheet Details

Part number
HU50N06
Manufacturer
HAOLIN
File Size
1.83 MB
Datasheet
HU50N06-HAOLIN.pdf
Description
60V N-Channel MOSFET

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60V N-Channel MOSFET HAOLIN
HAOLIN HU50N06-like datasheet