HU50N06

60V N-Channel MOSFET

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HU50N06

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HAOLIN

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Description:

60v n-channel mosfet.
HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID =.
50 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide .

✔ HU50N06 Features

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  U

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HU50N06 60V N-Channel MOSFET HAOLIN

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