HU50N06 - 60V N-Channel MOSFET
HU50N06 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.022 Ω (Typ.) @V GS=10V 100% Avalanche Te
