HU60N03 - 30V N-Channel MOSFET
HU60N03 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V 100% Avalanche Test
