HU60N03

30V N-Channel MOSFET

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HU60N03

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HAOLIN

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Description:

30v n-channel mosfet.
HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 6.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Te.

✔ HU60N03 Features

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  U

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HU60N03 30V N-Channel MOSFET HAOLIN

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