Datasheet Details
- Part number
- HU60N03
- Manufacturer
- HAOLIN
- File Size
- 1.40 MB
- Datasheet
- HU60N03-HAOLIN.pdf
- Description
- 30V N-Channel MOSFET
HU60N03 Description
HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A .HU60N03 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 9mΩ (Typ. ) @V GS=10V 100% Avalanche Test
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