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HU60N03 Datasheet - HAOLIN

HU60N03 30V N-Channel MOSFET

HU60N03 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V  100% Avalanche Test

HU60N03-HAOLIN.pdf

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Datasheet Details

Part number:

HU60N03

Manufacturer:

HAOLIN

File Size:

1.40 MB

Description:

30v n-channel mosfet.

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TAGS

HU60N03 HU60N03 30V N-Channel MOSFET HAOLIN

HU60N03 Distributor