XL1225 Datasheet, Scrs, HAOPIN

XL1225 Features

• Scrs Blocking voltage to 400 V On-state RMS current to 0.8 A Ultra low gate trigger current Value 400 0.8 0.5 Unit V A A SYMBOL R jc R ja PARAMETER Thermal resistance Junc. To case Therm

PDF File Details

Part number:

XL1225

Manufacturer:

HAOPIN

File Size:

202.68kb

Download:

📄 Datasheet

Description:

Scrs. Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control ap

XL1225 Application

• Applications These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger c

TAGS

XL1225

HAOPIN

📁 Related Datasheet

XL1225 - Thyristor (BLUE ROCKET ELECTRONICS)
XL1225 Rev.E Mar.-2016 / Descriptions TO-92 。Thyristor in a TO-92 Plastic Package. / Features ，。 Intended for low cost high volume applications. /.

XL1225 - MEDIUM POWER LOW VOLTAGE TRANSISTOR (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high pe.

XL1225 - TO-92 Plastic-Encapsulate Transistors (Avic Technology)
.. AVIC TECHNOLOGY CO.,LTD. TO-92 Plastic-Encapsulate Transistors XL1225 FEATURES TO-92 Silicon Planar pnpn Thyristor 1. CATHODE.

XL1225 - Silicon Planar pnpn Thyristor (TGS)
TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors XL1225 Silicon Planar pnpn Thyristor TO-92 FEATURES Current-IGT: 120 µA ITRMS: 0.

XL1225 - SCR (ETC)
SCR XL 1225 / ML 1225 0.6A 300V (ML1225) / 400V (XL1225), IGT < 200 µA DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffus.

XL1225 - SENSITIVE GATE SILICON CONTROLLED RECTIFIERS (DC COMPONENTS)
DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS ML1225 XL1225 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RA.

XL1000 - 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier (Mimix Broadband)
.. 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier April 2005 - Rev 01-Apr-05 L1000 Chip Device Layout Features Self Bias Architecture.

XL1000-BD - Low Noise Amplifier (MA-COM)
XL1000-BD Low Noise Amplifier 20 - 40 GHz Features  Self Bias Architecture  Small Size  3 or 5 V Operation  20 dB Small Signal Gain  2 dB Noise F.

XL1001 - 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier (Mimix Broadband)
.. 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1001 Chip Device Layout Features Balanced Design Excell.

XL1002 - 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier (Mimix Broadband)
.. 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1002 Chip Device Layout Features Balanced Design Excell.