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2N6166

HG RF POWER TRANSISTOR

2N6166 Features

* C = 60 % min. @ 100 W/150 MHz PG = 6.0 dB min. @ 100 W/150 MHz Omnigold™ Metalization System MAXIMUM RATINGS IC 9.0 A VCBO 65 V VEBO 4.0 V PDISS 117 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C JC 1.5 °C/W PACKAGE STYLE .500 4L FLG FULL R .112x45° A E L C Ø.125 NOM.

2N6166 Datasheet (290.59 KB)

Preview of 2N6166 PDF

Datasheet Details

Part number:

2N6166

Manufacturer:

HG Semi

File Size:

290.59 KB

Description:

Hg rf power transistor.

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TAGS

2N6166 POWER TRANSISTOR HG Semi

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