Part number:
2N6166
Manufacturer:
HG Semi
File Size:
290.59 KB
Description:
Hg rf power transistor.
* C = 60 % min. @ 100 W/150 MHz PG = 6.0 dB min. @ 100 W/150 MHz Omnigold™ Metalization System MAXIMUM RATINGS IC 9.0 A VCBO 65 V VEBO 4.0 V PDISS 117 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C JC 1.5 °C/W PACKAGE STYLE .500 4L FLG FULL R .112x45° A E L C Ø.125 NOM.
2N6166
HG Semi
290.59 KB
Hg rf power transistor.
📁 Related Datasheet
2N6160 Triacs (Solid State)
2N6160 THYRISTORS (Digitron Semiconductors)
2N6160 Silicon Bidirectional Triode Thyristors (Motorola)
2N6161 Triacs (Solid State)
2N6161 THYRISTORS (Digitron Semiconductors)
2N6161 Triacs / Silicon Bidirectional Triode Thristors (Motorola)
2N6161 Silicon Controlled Rectifiers (Advanced Semiconductor)
2N6161 Silicon Bidirectional Triode Thyristors (Motorola)
2N6162 Triacs (Solid State)
2N6162 THYRISTORS (Digitron Semiconductors)