2SC2312 Description
Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
2SC2312 Key Features
- HG RF POWER TRANSISTOR
- Part: 2SC2312
- Manufacturer: HGSemi
- Size: 275.71 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Mitsubishi Electric |
2SC2312 | RF POWER TRANSISTOR |
| ELEFLOW TECHNOLOGIES ELEFLOW TECHNOLOGIES |
2SC2312 | Silicon NPN Transistor |
|
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2SC2312 | NPN Silicon Epitaxial Planar Transistor |