| Part number | 2SC2312 |
|---|---|
| Datasheet | 2SC2312-HGSemi.pdf |
| File Size | 275.71 KB |
| Manufacturer | HGSemi |
| Description | Silicon NPN POWER TRANSISTOR |
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Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC2312 | RF POWER TRANSISTOR | Mitsubishi Electric |
| ELEFLOW TECHNOLOGIES | 2SC2312 | Silicon NPN Transistor | ELEFLOW TECHNOLOGIES |
|
2SC2312 | NPN Silicon Epitaxial Planar Transistor | Mitsubishi Electric |
| Part Number | Description |
|---|---|
| 2SC2330 | HG RF POWER TRANSISTOR |
| 2SC2395 | Silicon NPN POWER TRANSISTOR |
| 2SC2097 | HG RF POWER TRANSISTOR |
| 2SC2099 | Silicon NPN POWER TRANSISTOR |
| 2SC2101 | Silicon NPN POWER TRANSISTOR |
| 2SC2181 | Silicon NPN POWER TRANSISTOR |
| 2SC2290 | Silicon NPN POWER TRANSISTOR |
| 2SC2508 | Silicon NPN POWER TRANSISTOR |
| 2SC2510 | Silicon NPN POWER TRANSISTOR |
| 2SC2558 | HG RF POWER TRANSISTOR |
