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2SC2312 - Silicon NPN POWER TRANSISTOR

Description

Designed for RF power amplifier on HF band mobile radio applications.

STYLE 1: PIN 1.

2.

Features

  • HG RF POWER.

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Datasheet Details

Part number 2SC2312
Manufacturer HGSemi
File Size 275.71 KB
Description Silicon NPN POWER TRANSISTOR
Datasheet download datasheet 2SC2312 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G H FEATURES • • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T– SEATING PLANE 4 DESCRIPTION Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMENSIONS UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.380 C 4.82 4.07 0.19 0.16 D 0.88 0.64 0.035 0.025 F 3.73 3.61 0.147 0.142 G 2.66 2.42 0.105 0.095 H 3.93 2.8 0.155 0.110 J 0.64 0.46 0.025 0.018 K 14.27 12.70 0.562 0.500 L 1.52 1.15 0.060 0.045 N 5.33 4.83 0.210 0.190 Q 3.04 2.54 0.12 0.10 R 2.79 2.04 0.11 0.08 S 1.39 1.15 0.055 0.
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