Datasheet4U Logo Datasheet4U.com

2SC2312 - Silicon NPN POWER TRANSISTOR

2SC2312 Description

G H .
Designed for RF power amplifier on HF band mobile radio applications.

2SC2312 Features

* HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312
* T

2SC2312 Applications

* T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMENSIONS UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.3

📥 Download Datasheet

Preview of 2SC2312 PDF

Datasheet Details

Part number
2SC2312
Manufacturer
HGSemi
File Size
275.71 KB
Datasheet
2SC2312-HGSemi.pdf
Description
Silicon NPN POWER TRANSISTOR

📁 Related Datasheet

  • 2SC2310 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC2314 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC2315 - Silicon NPN Transistor (Sanken electric)
  • 2SC2316 - NPN Transistor (INCHANGE)
  • 2SC2318 - Silicon NPN Transistor (Toshiba)
  • 2SC2304 - NPN Transistor (INCHANGE)
  • 2SC2305 - NPN Transistor (INCHANGE)
  • 2SC2307 - Silicon NPN Transistor (Sanken Electric)

📌 All Tags

Silicon NPN POWER TRANSISTOR HGSemi
HGSemi 2SC2312-like datasheet