SFX18N50 Datasheet | HI-SEMICON

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction,electronic lamp ballasts based on half bridge 1 3 1.Gate 2.Drain 3.Source TO-3PN FEATURES - 18A,500V,RDS(ON)(typ)=0.26@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 12 3 TO-220F-3L 123 TO-220-3L NOMENCLATURE ORDERING INFORMATION Part No. SFP18N50 SFF18N50 SFW18N50 Package TO-220-3L TO-220F-3L TO-3P Marking SFP18N50 SFF18N50 SFW18N50 Material Pb free Pb free Pb free Packing Tube Tube Tube Http://.hi-semicon. Page 1 of 8 ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise...