SFX33N10
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology
TO-251J-3L 1
3 1.Gate 2.Darin 3.Source TO-251D-3L
TO-252-2L
FEATURES
- 33A,100V,RDS(on)（typ）=34m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
TO-220-3L
TO-220F-3L
ORDERING INFORMATION
Part No.
Package
SFP33N10 SFF33N10 SFD33N10TR SFD33N10
TO-220-3L TO-220F-3L TO-252-2L TO-252-2L
Marking
SFP33N10 SFF33N10 SFD33N10 SFD33N10
Material Pb free Pb free Pb free Pb...
