Datasheet Details
Part number:
H01N60, H01N60-HI
Manufacturer:
HI-SINCERITY
File Size:
57.53 KB
Description:
N-channel power field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI.
Please refer to the document for exact specifications by model.
H01N60, H01N60-HI, N-Channel Power Field Effect Transistor
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offer
H01N60 Features
* 1A, 600V, RDS(on)=8Ω@VGS=10V
* Low Gate Charge 15nC(Typ.)
* Low Crss 4pF(Typ.)
* Fast Switching
* Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC
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