H01N60 Datasheet, Transistor, HI-SINCERITY

H01N60 Features

  • Transistor
  • 1A, 600V, RDS(on)=8Ω@VGS=10V
  • Low Gate Charge 15nC(Typ.)
  • Low Crss 4pF(Typ.)
  • Fast Switching
  • Improved dv/dt Capability Absolute Maximum Ra

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Part number:

H01N60

Manufacturer:

HI-SINCERITY

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57.53kb

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📄 Datasheet

Description:

N-channel power field effect transistor. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding perfo

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Page 2 of H01N60 Page 3 of H01N60

H01N60 Application

  • Applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed

TAGS

H01N60
N-Channel
Power
Field
Effect
Transistor
HI-SINCERITY

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