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H01N60

N-Channel Power Field Effect Transistor

H01N60 Datasheet (57.53 KB)

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Datasheet Details

Part number:

H01N60

Manufacturer:

HI-SINCERITY

File Size:

57.53 KB

Description:

N-channel power field effect transistor.

H01N60 Features

* 1A, 600V, RDS(on)=8Ω@VGS=10V

* Low Gate Charge 15nC(Typ.)

* Low Crss 4pF(Typ.)

* Fast Switching

* Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC

H01N60 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

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H01N60 N-Channel Power Field Effect Transistor HI-SINCERITY

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