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H01N60, H01N60-HI Datasheet - HI-SINCERITY

H01N60 N-Channel Power Field Effect Transistor

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H01N60 Features

* 1A, 600V, RDS(on)=8Ω@VGS=10V

* Low Gate Charge 15nC(Typ.)

* Low Crss 4pF(Typ.)

* Fast Switching

* Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC

H01N60-HI-SINCERITY.pdf

This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

H01N60, H01N60-HI

Manufacturer:

HI-SINCERITY

File Size:

57.53 KB

Description:

N-channel power field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI.
Please refer to the document for exact specifications by model.

H01N60 Distributor

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H01N60 H01N60-HI N-Channel Power Field Effect Transistor HI-SINCERITY