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H01N60, H01N60-HI N-Channel Power Field Effect Transistor

H01N60 Description

HI-SINCERITY MICROELECTRONICS CORP.H01N60 Series N-Channel Power Field Effect Transistor .
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

H01N60 Features

* 1A, 600V, RDS(on)=8Ω@VGS=10V
* Low Gate Charge 15nC(Typ. )
* Low Crss 4pF(Typ. )
* Fast Switching
* Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC

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This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H01N60, H01N60-HI
Manufacturer
HI-SINCERITY
File Size
57.53 KB
Datasheet
H01N60-HI-SINCERITY.pdf
Description
N-Channel Power Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI.
Please refer to the document for exact specifications by model.

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N-Channel Power Field Effect Transistor HI-SINCERITY
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