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H8205A - Dual N-Channel Enhancement-Mode MOSFET

This page provides the datasheet information for the H8205A, a member of the H8205A-HI Dual N-Channel Enhancement-Mode MOSFET family.

Datasheet Summary

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

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Datasheet preview – H8205A

Datasheet Details

Part number H8205A
Manufacturer HI-SINCERITY
File Size 94.67 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H8205A Datasheet
Additional preview pages of the H8205A datasheet.

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    Full PDF Text Transcription

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    HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : Page No. : 1/4 H8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.
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