H8205A Datasheet, Mosfet, HI-SINCERITY

H8205A Features

  • Mosfet
  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
  • High Density Cell Design for Ultra Low On-Resistance
  • High Power and Current Handing Capability

PDF File Details

Part number:

H8205A

Manufacturer:

HI-SINCERITY

File Size:

94.67kb

Download:

📄 Datasheet

Description:

Dual n-channel enhancement-mode mosfet. This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management

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H8205A Application

  • Applications with a wide range of gate drive voltage (2.5V-10V) Features
  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A

TAGS

H8205A
Dual
N-Channel
Enhancement-Mode
MOSFET
HI-SINCERITY

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