H8205A Datasheet - HI-SINCERITY

H8205A Dual N-Channel Enhancement-Mode MOSFET

H8205A Features

* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A

* High Density Cell Design for Ultra Low On-Resistance

* High Power and Current Handing Capability

* Fully Characterized Avalanche Voltage and Current

* Ideal for Li ion Battery Pack Applications

Datasheet Details

H8205A

HI-SINCERITY

94.67 KB

Dual n-channel enhancement-mode mosfet.

📁 Related Datasheet

H8236-07 HPD (HYBRID PHOTO-DETECTOR) MODULES (Hamamatsu Corporation)

H8249 Side-on PMT (Hamamatsu Corporation)

H8249-001 Side-on PMT (Hamamatsu Corporation)

H8-108QUB SMD LED (QILSTE)

H8-108QUO SMD LED (QILSTE)

H8-108QUY SMD LED (QILSTE)

H8-108QUYG SMD LED (QILSTE)

H8-108QZR SMD LED (QILSTE)

TAGS

H8205A Dual N-Channel Enhancement-Mode MOSFET HI-SINCERITY

H8205A Distributor