H8205A

Dual N-Channel Enhancement-Mode MOSFET

HI-SINCERITY

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Part number:

H8205A

Manufacturer:

HI-SINCERITY

File Size:

94.67 KB

Description:

Dual n-channel enhancement-mode mosfet.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : P.
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has bee.

✔ H8205A Features

RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully

✔ H8205A Application

with a wide range of gate drive voltage (2.5V-10V) Features
RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@V

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H8205A Dual N-Channel Enhancement-Mode MOSFET HI-SINCERITY

Datasheet Details

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Description:

✔ H8205A Features

✔ H8205A Application

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