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H8205A, H8205A-HI Dual N-Channel Enhancement-Mode MOSFET

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Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200905 Issued Date : 2009.02.27 Revised Date : Page No.: 1/4 H8205A Dual N-Channel Enhancement-M.
This N-Channel 2.

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This datasheet PDF includes multiple part numbers: H8205A, H8205A-HI. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H8205A, H8205A-HI
Manufacturer
HI-SINCERITY
File Size
94.67 KB
Datasheet
H8205A-HI-SINCERITY.pdf
Description
Dual N-Channel Enhancement-Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: H8205A, H8205A-HI.
Please refer to the document for exact specifications by model.

Features

* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
* High Density Cell Design for Ultra Low On-Resistance
* High Power and Current Handing Capability
* Fully Characterized Avalanche Voltage and Current

H8205A Distributors

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