HT666, HT666-HI - NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY

Datasheet Details

Part number	HT666, HT666-HI
Manufacturer	HI-SINCERITY
File Size	43.81 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HT666-HI-SINCERITY.pdf
Note	This datasheet PDF includes multiple part numbers: HT666, HT666-HI. Please refer to the document for exact specifications by model.

The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.

High Frequency Current Gain.
High Speed Switching Transistor TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) BVCBO Collector to Base Voltage 75 V BVCEO Collector to Emitter Voltage 40 V BVEBO Emitter to Base Voltage 6 V IC Collector Current 600 mA Electrical Cha.

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Published: Aug 4, 2015 |