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HY1906B - N-Channel Enhancement Mode MOSFET

General Description

DS G TO-220FB-3L DS G TO-263-2L Applications

Power Management for Inverter Systems.

Key Features

  • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ. ) @ V =10V GS.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY1906B
Manufacturer HOOYI
File Size 2.20 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1906B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1906 HY1906 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.