Datasheet4U Logo Datasheet4U.com

HY1906B N-Channel Enhancement Mode MOSFET

HY1906B Description

HY1906P/B N-Channel Enhancement Mode MOSFET .
DS G TO-220FB-3L DS G TO-263-2L Applications. Power Management for Inverter Systems.

HY1906B Features

* 60V / 120 A , RDS(ON)= 6.0 mΩ (typ. ) @ V =10V GS
* Avalanche Rated
* Reliable and Rugged

HY1906B Applications

* Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1906 HY1906 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain moldin

📥 Download Datasheet

Preview of HY1906B PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HY1906B
Manufacturer
HOOYI
File Size
2.20 MB
Datasheet
HY1906B-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET

📁 Related Datasheet

  • HY1906C2 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1904B - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1904M - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1904P - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY19-12 - 90 Degree Hybrid 1.85-1.99 GHz (Alpha Industries)
  • HY1915B - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1915P - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1920B - N-Channel Enhancement Mode MOSFET (HUAYI)

📌 All Tags

HOOYI HY1906B-like datasheet