HY1906B N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY1906P/B N-Channel Enhancement Mode MOSFET .
DS G TO-220FB-3L DS G TO-263-2L Applications. Power Management for Inverter Systems.

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Datasheet Specifications

Part number: HY1906B
Manufacturer: HOOYI
File Size: 2.20 MB
Datasheet: HY1906B-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 60V / 120 A , RDS(ON)= 6.0 mΩ (typ. ) @ V =10V GS
* Avalanche Rated
* Reliable and Rugged

Applications

* Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1906 HY1906 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain moldin

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HY1906B N-Channel Enhancement Mode MOSFET HOOYI

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