Part number: HY3003
Manufacturer: HOOYI
File Size: 648.21KB
Download: 📄 Datasheet
Description: N-Channel MOSFET
* 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
* 100% EAS Guaranteed
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* Advanced high cell densit.
* High Frequency Synchronous Buck
Converters for Computer Processor Power
* High Frequency Isolated DC-DC
Conve.
DS G TO-220FB-3L
DS G TO-263-2L
Applications
* High Frequency Synchronous Buck
Converters for Computer Processor Power
* High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use
Ordering and M.
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📁 Related Datasheet
HY3003B - N-Channel MOSFET
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Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003P - N-Channel MOSFET
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RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
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Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007M - N-Channel Enhancement Mode MOSFET
(HOOYI)
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• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007PM - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007PS - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3008B - N-Channel Enhancement Mode MOSFET
(HOOYI)
.
