HY3003 Datasheet, Mosfet, HOOYI

✔ HY3003 Features

30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
100% EAS Guaranteed
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology

✔ HY3003 Application

High Frequency Synchronous Buck Converters for Computer Processor Power
High Frequency Isolated DC-DC C

PDF File Details

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Part number:

HY3003

Manufacturer:

HOOYI

File Size:

648.21kb

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📄 Datasheet

Description:

N-channel mosfet. DS G TO-220FB-3L DS G TO-263-2L Applications * High Frequency Synchronous Buck Converters for Computer Processor Power * High Fre

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📁 Related Datasheet

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HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003P - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

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HY3007M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007PM - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007PS - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

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HY3008M - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY3003 N-Channel MOSFET HOOYI