• Part: HYG050N13NS1B6
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 1.41 MB
Download HYG050N13NS1B6 Datasheet PDF
HOOYI
HYG050N13NS1B6
Feature - 135V/200A RDS(ON)=3.8mΩ(typ.) @ VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Lead-Free and Green Devices Available (Ro HS pliant) Applications - Power Switching application - Uninterruptible Power Supply N-Channel Enhancement Mode MOSFET Pin Description Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G050N13 XYMXXXXXX Package Code B6:TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections,...