HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET

HUAYI

Description

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET .
30V/220A RDS(ON)= 0. 100% Avalanche Tested. Reliable and Rugged. Halog.

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Datasheet Specifications

Part number: HYG007N03LS1C2
Manufacturer: HUAYI
File Size: 632.14 KB
Datasheet: HYG007N03LS1C2-HUAYI.pdf
Description: Single N-Channel Enhancement Mode MOSFET

Applications

* Switching Application
* Power Management for DC/DC
* Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G007N03 XYMXXXXXX Package Code C2: PDFN5
* 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials a

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HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET HUAYI

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