Datasheet4U Logo Datasheet4U.com

HYG007N03LS1C2 Datasheet - HUAYI

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET

* 30V/220A RDS(ON)= 0.63mΩ (typ.) @VGS = 10V RDS(ON)= 0.96 mΩ (typ.) @VGS = 4.5V * 100% Avalanche Tested * Reliable and Rugged * Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5 *6-8L Applications * Switching Application * Power Managem.

HYG007N03LS1C2-HUAYI.pdf

Preview of HYG007N03LS1C2 PDF
HYG007N03LS1C2 Datasheet Preview Page 2 HYG007N03LS1C2 Datasheet Preview Page 3

Datasheet Details

Part number:

HYG007N03LS1C2

Manufacturer:

HUAYI

File Size:

632.14 KB

Description:

Single n-channel enhancement mode mosfet.

HYG007N03LS1C2 Distributor

📁 Related Datasheet

HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET (HUAYI)

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET (HUAYI)

HYG010N06NS1TA N-Channel Enhancement Mode MOSFET (HUAYI)

HYG011N04LS1C2 Single N-Channel Enhancement Mode MOSFET (HUAYI)

HYG011N04LS1TA N-Channel Enhancement Mode MOSFET (HUAYI)

HYG012N03LR1B N-Channel Enhancement Mode MOSFET (HOOYI)

HYG012N03LR1P N-Channel Enhancement Mode MOSFET (HOOYI)

HYG012N08NS1TA N-Channel Enhancement Mode MOSFET (HOOYI)

TAGS

HYG007N03LS1C2 HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET HUAYI