Datasheet4U Logo Datasheet4U.com

HYG013N03LS1C2 Datasheet, Mosfet, HUAYI

✔ HYG013N03LS1C2 Application

PDF File Details

Manufacture Logo for HUAYI
HUAYI manufacturer logo

Part number:

HYG013N03LS1C2

Manufacturer:

HUAYI

File Size:

627.66kb

Download:

📄 Datasheet

Description:

Single n-channel mosfet. * 30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V * 100% Avalanche Tested * Reliable and Rugged * Halogen

Datasheet Preview: HYG013N03LS1C2 📥 Download PDF (627.66kb)
Page 2 of HYG013N03LS1C2 Page 3 of HYG013N03LS1C2

📁 Related Datasheet

HYG022N03LQ1D - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.
HYG022N03LQ1U - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.
HYG022N03LQ1V - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.
HYG023N03LR1C2 - N-Channel MOSFET (HUAYI)
HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.

TAGS

HYG013N03LS1C2 Single N-Channel MOSFET HUAYI