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HV600S10 - High Voltage Silicon Rectifier Diode

Datasheet Summary

Features

  • 1. High overload surge capability. 2. Avalanche Characteristic. 3. Medium Current, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-721 5. Epoxy resin molded in vacuumHave anticorrosion in the surface.

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Datasheet Details

Part number HV600S10
Manufacturer HVGT
File Size 481.94 KB
Description High Voltage Silicon Rectifier Diode
Datasheet download datasheet HV600S10 Datasheet
Additional preview pages of the HV600S10 datasheet.

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Full PDF Text Transcription

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HV600S10 450mA 10kV --nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High overload surge capability. 2. Avalanche Characteristic. 3. Medium Current, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-721 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Rectifier for high voltage power supply. 2.
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