AA16-9DIL18 Datasheet - HY ELECTRONIC

AA16-9DIL18 Avalanche Photodiode Array

www.DataSheet4U.com AA16-9 DIL18 16 Element Avalanche Photodiode Array Special characteristics: quantum efficiency >80% at λ 760-910 nm high speed, low noise good uniformity between elements low cross talk Parameters: no. of Elements Active Area / Element [µm] Gap / Separation [µm] Pitch [µm] Spectral Range Spectral Responsivity 1) (at 905 nm, M = 100) Max. Gain (Ipo= 1nA) Dark Current 1) (M = 100) Capacitance 1)/Element (M=100) Breakdown Voltage UBR (at ID = 2 µA) Rise Time at 905 nm, 50 Ω Cr.

AA16-9DIL18_HYELECTRONIC.pdf