G8422-05 Datasheet, Photodiode, Hamamatsu Corporation

G8422-05 Features

• Photodiode Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm s Specifications / Absolute maxi

PDF File Details

Part number:

G8422-05

Manufacturer:

Hamamatsu Corporation

File Size:

255.70kb

Download:

📄 Datasheet

Description:

Ingaas pin photodiode.

G8422-05 Application

• Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B

TAGS

G8422-05

Hamamatsu Corporation

📁 Related Datasheet

G8422-03 - InGaAs PIN photodiode (Hamamatsu Corporation)
PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l .

G8422 - InGaAs PIN photodiode (Hamamatsu Corporation)
PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l .

G8421 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G8421-03 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G8421-05 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G8423 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G8423-03 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G8423-05 - InGaAs PIN photodiode (Hamamatsu Corporation)
.

G80 - Detach Connectors (Mitsumi Electronics)
MITSUMI Detach Connectors CAM-G79 · G80 Connectors OUTLINE 1. These are 16-pole connectors used for attaching and removing the operation panel to a.

G800N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate ch.