N7640 Datasheet | Hamamatsu Corporation

OVERVIEW The EB-CCD is an absolutely new high-sensitivity imaging device that employs the “Electron Bombardment (EB)” effect for image intensification. The EB-CCD basically consists of a photocathode and a CCD chip arranged in parallel in a vacuum tube. An optical image is converted at the photocathode into an electron image, which is then accelerated and directly bombards the CCD surface to produce electron multiplication. Even a low-light-level image can be brought into view with a high S/N ratio. Two types of EB-CCD are available depending on the readout method: the N7640 designed to operate at the TV scan rate and the N7220 for slow scan readout. Both types are pact and simple in structure, and deliver high sensitivity yet ensure high S/N ratio. The EB-CCD will open up new applications as the next generation of low-light-level imaging devices. SENSITIVITY PARISON (Calculated data) TAPPB0068EA 1000 EB-CCD N7640 100 SENSITIVITY (V. µJ-1. cm-2) NORMAL 2/3" CCD 10 1 200 WAVELENGTH (nm) APPLICATIONS q High sensitivity video camera - Semiconductor wafer inspection - Real time fluorescence observation - Biochemical emission imaging - Biophoton imaging SPECTRAL RESPONSE TII B0020EA CATHODE SENSITIVITY CATHODE RADIANT SENSITIVITY (m A/W) QUANTUM EFFICIENCY (%) FEATURES TV scan rate type q Resolution q Gain q Detection limit - 1 400 TV lines 700 0.3 mlx 450 TV lines 1300 Detectable down to single photon region QUANTUM EFFICIENCY 100 10-1 Slow scan type q Resolution q Gain q Detection limit 10-2 100 200 300 400 500 600 700 800 900 1000 - 1: Minimum illuminance on the photocathode required to produce an image. WAVELENGTH (nm) SPECIFICATIONS q...