MSA-1000 Datasheet | Hewlett-Packard

Features - High Output Power: +27 d Bm Typical P1d B at 1.0␣ GHz - Low Distortion: 37 d Bm Typical IP3 at 1.0␣ GHz - 8.5 d B Typical Gain at 1.0␣ GHz - Impedance Matched to 25 Ω for Push-Pull Configurations amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The remended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire. This chip is intended to be used with an external blocking capacitor pleting the shunt feedback Chip Outline[1] 3 1 4 Description The MSA-1000 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is...