HWC34NC - C-Band Power FET Non-Via Hole Chip

HWC34NC Datasheet Preview — Preview of HWC34NC PDF

Datasheet Details

Part number	HWC34NC
Manufacturer	Hexawave
File Size	74.28 KB
Description	C-Band Power FET Non-Via Hole Chip
Datasheet	HWC34NC-Hexawave.pdf

HWC34NC Product details

Description

The HWC34NC is a power GaAs FET designed for various L-band & S-band applications. Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation mounted on an infinite heat sink +15V -5V IDSS 6mA 175°C -65 to +175°C 12W Autumn 2002 V1 Outline Dimensions 1525.0 1392.5 9 1235.0 1077.5 1 10 5 920.0 762.5 2 11 6 605.0 3 7 447.5 12 290.0 132.5 0.0

Features

Low Cost GaAs Power FET.
Class A or Class AB Operation.
8.5 dB Typical Gain at 4 GHz.
5V to 10V Operation.

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