Datasheet4U Logo Datasheet4U.com

HWL30YRA L-Band GaAs Power FET

HWL30YRA Description

.
The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

HWL30YRA Features

* Low Cost GaAs Power FET
* Class A or Class AB Operation
* Typical 16.5 dB Gain

HWL30YRA Applications

* It is presently offered in low cost ceramic package. HWL30YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG PT
* Storage Temperature Po

📥 Download Datasheet

Preview of HWL30YRA PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HWL30YRA
Manufacturer
Hexawave
File Size
86.62 KB
Datasheet
HWL30YRA-Hexawave.pdf
Description
L-Band GaAs Power FET

📁 Related Datasheet

  • HWL30NC - L-Band Power FET Non-Via Hole (Aimtron Technology)
  • HWL30NPA - L-Band GaAs Power FET (ETC)
  • HWL34YRA - L-Band GaAs Power FET (ETC)
  • HWL36YRA - L-Band GaAs Power FET (ETC)
  • HWL26YC - L-Band Power FET Via Hole Chip (ETC)

📌 All Tags

L-Band GaAs Power FET Hexawave
Hexawave HWL30YRA-like datasheet