Description
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No.: 1/5 H03.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
Features
* H03N60 Series Symbol:
* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Eleva
Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. 1 2 3
3-Lead Plastic TO-220AB Packa
