H03N60, H03N60_Hi Datasheet - Hi-Sincerity Mocroelectronics

H03N60 N-Channel Power Field Effect Transistor

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H03N60 Features

* H03N60 Series Symbol:

* Robust High Voltage Termination

* Avalanc he Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Eleva

H03N60_Hi-SincerityMocroelectronics.pdf

H03N60 Datasheet Preview — This datasheet PDF includes multiple part numbers: H03N60, H03N60_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H03N60, H03N60_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

92.33 KB

Description:

N-channel power field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: H03N60, H03N60_Hi.
Please refer to the document for exact specifications by model.

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H03N60 H03N60_Hi N-Channel Power Field Effect Transistor Hi-Sincerity Mocroelectronics

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