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H03N60

N-Channel Power Field Effect Transistor

H03N60 Datasheet (92.33 KB)

Preview of H03N60 PDF Datasheet

Datasheet Details

Part number:

H03N60

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

92.33 KB

Description:

N-channel power field effect transistor

H03N60 Features

* H03N60 Series Symbol:

* Robust High Voltage Termination

* Avalanc he Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Eleva

H03N60 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

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H03N60 N-Channel Power Field Effect Transistor Hi-Sincerity Mocroelectronics

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