H03N60, H03N60_Hi N-Channel Power Field Effect Transistor

Hi-Sincerity Mocroelectronics

H03N60 Description

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No.: 1/5 H03.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

H03N60 Features

* H03N60 Series Symbol:
* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Eleva

H03N60 Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. 1 2 3 3-Lead Plastic TO-220AB Packa

📥 Download Datasheet

H03N60 Datasheet Preview — This datasheet PDF includes multiple part numbers: H03N60, H03N60_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: H03N60, H03N60_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 92.33 KB
Datasheet: H03N60_Hi-SincerityMocroelectronics.pdf
Description: N-Channel Power Field Effect Transistor
Note: This datasheet PDF includes multiple part numbers: H03N60, H03N60_Hi.
Please refer to the document for exact specifications by model.

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N-Channel Power Field Effect Transistor Hi-Sincerity Mocroelectronics

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