H04N60, H04N60_Hi Datasheet - Hi-Sincerity Mocroelectronics

H04N60 N-Channel Power Field Effect Transistor

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters.

H04N60 Features

* Higher Current Rating

* Lower RDS(on)

* Lower Capacitances

* Lower Total Gate Charge

* Tighter VSD Specifications

* Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series

H04N60_Hi-SincerityMocroelectronics.pdf

H04N60 Datasheet Preview — This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H04N60, H04N60_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

108.96 KB

Description:

N-channel power field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi.
Please refer to the document for exact specifications by model.

H04N60 Distributor

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TAGS

H04N60 H04N60_Hi N-Channel Power Field Effect Transistor Hi-Sincerity Mocroelectronics