H04N60 Datasheet - Hi-Sincerity Mocroelectronics

H04N60 N-Channel Power Field Effect Transistor

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters.

H04N60 Features

* Higher Current Rating

* Lower RDS(on)

* Lower Capacitances

* Lower Total Gate Charge

* Tighter VSD Specifications

* Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series

H04N60 Datasheet (108.96 KB)

H04N60 Datasheet Preview — Preview of H04N60 PDF

Datasheet Details

Part number:

H04N60

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

108.96 KB

Description:

N-channel power field effect transistor.

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H04N60 N-Channel Power Field Effect Transistor Hi-Sincerity Mocroelectronics

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