H04N60_Hi-SincerityMocroelectronics.pdf
Datasheet Details
Part number:
H04N60, H04N60_Hi
Manufacturer:
Hi-Sincerity Mocroelectronics
File Size:
108.96 KB
Description:
N-channel power field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi.
Please refer to the document for exact specifications by model.
H04N60, H04N60_Hi, N-Channel Power Field Effect Transistor
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power suplies, converters
H04N60 Features
* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series
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