H04N60, H04N60_Hi N-Channel Power Field Effect Transistor

Hi-Sincerity Mocroelectronics

Description

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No.: 1/5 H04.
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

📥 Download Datasheet

H04N60 Datasheet Preview — This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H04N60, H04N60_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 108.96 KB
Datasheet: H04N60_Hi-SincerityMocroelectronics.pdf
Description: N-Channel Power Field Effect Transistor
Note: This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi.
Please refer to the document for exact specifications by model.

Features

* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series

H04N60 Distributors

📁 Related Datasheet

📌 All Tags

H04N60_Hi N-Channel Power Field Effect Transistor Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics H04N60-like datasheet