H1N5820, H1N5820_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

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H1N5820 Datasheet Preview — This datasheet PDF includes multiple part numbers: H1N5820, H1N5820_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: H1N5820, H1N5820_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 32.94 KB
Datasheet: H1N5820_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H1N5820, H1N5820_Hi.
Please refer to the document for exact specifications by model.

H1N5820 Product details

Description

The H2584 is designed for use in low voltage and low dropout regulator applications.. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum. Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 65 W. Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -20 V VCEO Collector to Emitter Voltage -15 V VEBO Emitter to Base Voltage -5 V IC Collector Current -10 A Characteri.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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