H1N5820

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

H1N5820 General Description

The H2584 is designed for use in low voltage and low dropout regulator applications. Absolute Maximum Ratings TO-220

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 65 W <.

H1N5820 Datasheet (32.94 KB)

H1N5820 Datasheet Preview — Preview of H1N5820 PDF

Datasheet Details

Part number:

H1N5820

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

32.94 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6716 Issued Date : 1996.02.01 Revised Date : 2002.02.18 Page No. : 1/3 H2584 PNP EPITAXIAL PLANAR .

📁 Related Datasheet

H1N5817 1.0AMP.SCHOTTKY BARRIER RECTIFIERS (Hi-Sincerity Mocroelectronics)

H1N5818 1.0AMP.SCHOTTKY BARRIER RECTIFIERS (Hi-Sincerity Mocroelectronics)

H1N5819 1.0AMP.SCHOTTKY BARRIER RECTIFIERS (Hi-Sincerity Mocroelectronics)

H1N4001 General Purpose Rectifiers (Hi-Sincerity Mocroelectronics)

H1N4002 General Purpose Rectifiers (Hi-Sincerity Mocroelectronics)

H1N4004 General Purpose Rectifiers (Hi-Sincerity Mocroelectronics)

H1N4007 General Purpose Rectifiers (Hi-Sincerity Mocroelectronics)

H1N60D N-Channel MOSFET (HAOHAI)

H1N60U N-Channel MOSFET (HAOHAI)

H10-C315ARBGYI-5M SMD LED (QILSTE)

TAGS