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H1N5820, H1N5820_Hi PNP EPITAXIAL PLANAR TRANSISTOR

H1N5820 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6716 Issued Date : 1996.02.01 Revised Date : 2002.02.18 Page No.: 1/3 H2584 PNP EPITAXIAL PLANAR .
The H2584 is designed for use in low voltage and low dropout regulator applications. Maximum Temperatures.

H1N5820 Applications

* Absolute Maximum Ratings TO-220
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 65 W
* Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -20

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This datasheet PDF includes multiple part numbers: H1N5820, H1N5820_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H1N5820, H1N5820_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
32.94 KB
Datasheet
H1N5820_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H1N5820, H1N5820_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H1N5820-like datasheet