Description
HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No.: 1/5 H45N03E N-Channel Enhanc.
Features
* RDS(on)=15mΩ@VGS=10V, ID=25A
* RDS(on)=20mΩ@VGS=4.5V, ID=25A www. DataSheet4U. com
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Character
Applications
* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel: