H45N03E Features
* RDS(on)=15mΩ@VGS=10V, ID=25A
* RDS(on)=20mΩ@VGS=4.5V, ID=25A www.DataSheet4U.com
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Character
H45N03E_Hi-SincerityMocroelectronics.pdf
Datasheet Details
H45N03E, H45N03E_Hi
Hi-Sincerity Mocroelectronics
87.42 KB
N-channel enhancement-mode mosfet.
This datasheet PDF includes multiple part numbers: H45N03E, H45N03E_Hi.
Please refer to the document for exact specifications by model.
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H45N03E Distributor
