H45N03E, H45N03E_Hi - N-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics

H45N03E Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No.: 1/5 H45N03E N-Channel Enhanc.

H45N03E Features

* RDS(on)=15mΩ@VGS=10V, ID=25A
* RDS(on)=20mΩ@VGS=4.5V, ID=25A www. DataSheet4U. com
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Character

H45N03E Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

📥 Download Datasheet

H45N03E Datasheet Preview — This datasheet PDF includes multiple part numbers: H45N03E, H45N03E_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: H45N03E, H45N03E_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 87.42 KB
Datasheet: H45N03E_Hi-SincerityMocroelectronics.pdf
Description: N-Channel Enhancement-Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: H45N03E, H45N03E_Hi.
Please refer to the document for exact specifications by model.

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N-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics

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