HA3669 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HA3669 General Description

The HA3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-92 * Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipat.

HA3669 Datasheet (45.23 KB)

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HA3669

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Hi-Sincerity Mocroelectronics

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Pa.

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HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HA3669 General Description

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