HA3669, HA3669_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HA3669 Description

HI-SINCERITY MICROELECTRONICS CORP.HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Pa.
The HA3669 is designed for using in power amplifier applications, power switching application.

HA3669 Applications

* power switching application. Absolute Maximum Ratings (TA=25°C) TO-92
* Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW
* Maximum Voltages and Currents BVCB

📥 Download Datasheet

HA3669 Datasheet Preview — This datasheet PDF includes multiple part numbers: HA3669, HA3669_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HA3669, HA3669_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 45.23 KB
Datasheet: HA3669_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HA3669, HA3669_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HA3669-like datasheet