HAD826SP, HAD826SP_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HAD826SP Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.:Preliminary Data Issued Date : 2000.10.01 Revised Date : 2000.10.01 Page No.: 1/3 HAD826SP NPN EPIT.
The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications. Low Collector Saturatio.

HAD826SP Features

* Low Collector Saturation Voltage
* High Speed Switching Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW
* Maximum Vol

📥 Download Datasheet

HAD826SP Datasheet Preview — This datasheet PDF includes multiple part numbers: HAD826SP, HAD826SP_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HAD826SP, HAD826SP_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 27.68 KB
Datasheet: HAD826SP_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HAD826SP, HAD826SP_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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