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HE9013, HE9013_Hi NPN TRANSISTOR

HE9013 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6104 Issued Date : 1992.09.09 Revised Date : 2004.09.29 Page No.: 1/5 HE9013 NPN EPITAXIAL PLANAR.
The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. High Total Power Dissipat.

HE9013 Features

* High Total Power Dissipation (PT: 625mW)
* High Collector Current (IC: 500mA)
* Complementary to HE9012
* Excellent lnearity TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HE9013, HE9013_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HE9013, HE9013_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
54.09 KB
Datasheet
HE9013_Hi-SincerityMocroelectronics.pdf
Description
NPN TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HE9013, HE9013_Hi.
Please refer to the document for exact specifications by model.

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NPN TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HE9013-like datasheet