HJ3669 Datasheet - Hi-Sincerity Mocroelectronics

NPN TRANSISTOR

HJ3669 General Description

The HJ3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-252 * Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipa.

HJ3669 Datasheet (89.45 KB)

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HJ3669

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Hi-Sincerity Mocroelectronics

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89.45 KB

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Npn transistor.
HI-SINCERITY MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2008.04.09 Page.

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HJ3669 General Description

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