HJ3669, HJ3669_Hi NPN TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6029 Issued Date : 1997.10.24 Revised Date : 2008.04.09 Page.
The HJ3669 is designed for using in power amplifier applications, power switching application.

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HJ3669 Datasheet Preview — This datasheet PDF includes multiple part numbers: HJ3669, HJ3669_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HJ3669, HJ3669_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 89.45 KB
Datasheet: HJ3669_Hi-SincerityMocroelectronics.pdf
Description: NPN TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HJ3669, HJ3669_Hi.
Please refer to the document for exact specifications by model.

Applications

* power switching application. Absolute Maximum Ratings (TA=25°C) TO-252
* Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W
* Maximum Voltages and Currents BVC

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HJ3669_Hi NPN TRANSISTOR Hi-Sincerity Mocroelectronics

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