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HJ3669, HJ3669_Hi NPN TRANSISTOR

HJ3669 Description

HI-SINCERITY MICROELECTRONICS CORP.HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6029 Issued Date : 1997.10.24 Revised Date : 2008.04.09 Page.
The HJ3669 is designed for using in power amplifier applications, power switching application.

HJ3669 Applications

* power switching application. Absolute Maximum Ratings (TA=25°C) TO-252
* Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W
* Maximum Voltages and Currents BVC

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This datasheet PDF includes multiple part numbers: HJ3669, HJ3669_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HJ3669, HJ3669_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
89.45 KB
Datasheet
HJ3669_Hi-SincerityMocroelectronics.pdf
Description
NPN TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HJ3669, HJ3669_Hi.
Please refer to the document for exact specifications by model.

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NPN TRANSISTOR Hi-Sincerity Mocroelectronics
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